High-frequency equivalent circuit of GaAs FETs for large-signal applications

نویسندگان
چکیده

برای دانلود باید عضویت طلایی داشته باشید

برای دانلود متن کامل این مقاله و بیش از 32 میلیون مقاله دیگر ابتدا ثبت نام کنید

اگر عضو سایت هستید لطفا وارد حساب کاربری خود شوید

منابع مشابه

Intrinsic Small-Signal Equivalent Circuit of GaAs MESFET’s

Finite Element Time Domain Method is used to determine the intrinsic elements of a broadband small-signal equivalent circuit (SSEC) of FET’s. The values of the differents elements are calculated from the Y parameters of the intrinsic MESFET, which are obtained from the Fourier analysis of the device transient reponse to voltage-step perturbations at the drain and gate electrodes. The success of...

متن کامل

Equivalent Circuit Model for Square Ring Slot Frequency Selective Surface

An equivalent circuit model for predicting the frequency response of a square ring slot frequency selective surface (SRS-FSS) for normal incidence is described. The proposed FSS consists of an array of square patches centered within a wire grid. The presented circuit model is formed by the impedance of the wire grid that is parallel with the impedance of the patch array, also the mutual couplin...

متن کامل

LARGE SIGNAL EQUIVALENT CIRCUIT MODEL FOR PACKAGE ALGaN/GaN HEMT

In this paper, a large signal equivalent circuit empirical model based on Anglov model for ceramic package high power AlGaN/GaN HEMT has been proposed. A temperature-dependent drain current model, including self-heating effect, has been presented, and good agreements are achieved between measurement results and calculated results at different temperatures. The nonlinear capacitance models are m...

متن کامل

InGaAs/GaAs HEMT for High Frequency Applications

In the modern VLSI especially for high speed devices, where the conventional MOSFET technology is reaching its limitations due to various short channel effects and velocity saturation effects etc, hetero-junction FETs have shown great promise for high speed devices. Novel HEMT device using heterojunctions made of and on a substrate is designed and modeled using TCAD software. Highly doped deep ...

متن کامل

Distributed Small Signal Modelling for Multi-port GaAs FETs

The design of Microwave and Millimeter-wave Monolithic Integrated Circuits (MMIC) requires a meaningful and accurate characterization of the electron device along with information about the changes caused by the process parameter variations. Meanwhile, increasing application of multi-port GaAs FETs, adopted for side-biasing in the higher level of MMIC integration, has led to increased research ...

متن کامل

ذخیره در منابع من


  با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید

ژورنال

عنوان ژورنال: IEEE Transactions on Microwave Theory and Techniques

سال: 1991

ISSN: 0018-9480,1557-9670

DOI: 10.1109/22.102964